• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
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    • 专利摘要:
    Functional analysis procedure of wirelessly powered semiconductors. A procedure is described for analyzing semiconductors wirelessly powered in the working conditions state, that is, the analysis is functional and allows to obtain real data of the component in those conditions in which it will be subjected when it is operating. It is based on the taking of data related to the temperatures that are produced in the semiconductor when it is operative, that is, data referring to the hyperthermia induced by the passage of current through the semiconductor in operation are taken. The signal that feeds the semiconductor component is subjected, while it is being fed and its temperature data are being taken, to a series of modulations that generate a series of effects on its surface, it allows us to see reactions to the modulations and obtain data as failures or points of interest related to the semiconductor while it is in operation. (Machine-translation by Google Translate, not legally binding)
    公开号:ES2579232A1
    申请号:ES201530015
    申请日:2015-01-08
    公开日:2016-08-08
    发明作者:Javier LEON CERRO；Xavier Perpiñá Giribet；Miquel Vellvehi Hernandez；Xavier Jordá Sanuy
    申请人:Consejo Superior de Investigaciones Cientificas CSIC；
    IPC主号:
    专利说明:

    DESCRIPTION

    Functional analysis procedure of wirelessly powered semiconductors.

    OBJECT OF THE INVENTION 5

    The present invention relates to the field of solid state electronic devices and systems based on semiconductor technology. The electronic devices and systems to which this invention is oriented are integrated in a chip and will now be referred to as components of a more complex system. 10
    The main object of the invention relates to a method that allows to analyze and diagnose non-invasively the operation of these wireless electronic components or of contactless transfer technology in real working conditions.

    BACKGROUND OF THE INVENTION 15

    Today, electronic systems that make use of wireless technologies for powering have become popular, such as wireless charging systems based on magnetic induction. These systems make use of electronic components (both devices and subsystems integrated or not monolithically) based on semiconductors that are powered by contactless technology.
    It is very important to identify locally in these components problems in their operation, whether in their phase of debugging, failure analysis or functional study. In the literature, the active methods have clear advantages over passive techniques, since the latter do not allow the device to be put into a representative operating regime 25 of the final application. There are different approaches to perform defect studies in devices through active stimulation, based on the detection of:
    • the magnetic field, as in probe scanning microscopy using SQUIDs,
    • stimulated light emission, as in emission or scanning scanning microscopy, EMMI, 30
    • voltage drop or electrical measurement, based on probe scanning microscopy techniques: conductive AFM, capacity scanning, surface scanning by phototension,
    • and finally the temperature field, being able to access the chip through the surface, the back side or laterally by any non-invasive technique: infrared, liquid crystal thermography, scanning Thermal Microscopy, Kelvin probe scanning microscopy, etc. .. 35
    Other techniques widely used in this field are the measurement of the change of local resistance that allow monitoring of the techniques OBIRCH (Optical Beam Induced Resistance CHange), TIVA
    (Thermal-Induced Voltage Alteration, or other variations such as Charge-Induced Voltage Alteration, CIVA), or those based on the use of a scanning electron microscope (SEM), such as:
    • EBAC (Electron Beam Absorved Current),
    • EBIC (Electron Beam Induced Current) or 5
    • tension contrast.
    All of them are passive techniques, and are practiced by performing a local stimulation without having any relation to the operation of the electronic component, as already mentioned above.
    Among all the mentioned techniques, the optics and those based on the determination of (active) temperature offer a series of advantages over those that monitor electrical or magnetic variables directly: there is no coupling of electrical effects in the measurement and it is accessed locally to all internal nodes. In addition, probe scanning techniques, such as probe scanning using SQUID, or those based on atomic force microscopy (AFM), only locally stimulate the area where the probe is located, which does not give functional information of the analyzed component . On the contrary, in the case of thermal measurements, it is possible to observe the electrical behavior of the component, if its stimulation is adequate. In the case of the techniques based on temperature determination, in addition, there is a direct correlation between the surface temperature map and the spatial distribution of current in the component, which makes the results obtained through them a good indicator of no electrical homogeneities that can manifest locally. This is understood thanks to physical phenomena that explain heat dissipation, such as the Joule effect. Thus, having access to the surface temperature field can be key in order to analyze and understand the problems outlined above. There are multiple surface temperature measurement techniques where this type of study could be carried out with the proposed invention. Normally, the measurements by modulation allow a series of advantages: increase the signal to noise ratio, make the temperature field on the surface of the device independent of the external or contour conditions, and confine the temperature field around the point where it has occurred failure. As a clear example, infrared lock-in thermography (IR-LIT) is a technique commonly used for fault analysis in semiconductor devices. In the state of the art, for solid-state electronic components powered wirelessly, they always comprise a power or power stage, where certain power has to be transferred wirelessly from an external power system, to an internal reception system inside the chip To do this, using as an example the transfer of energy 35 by electromagnetic induction, it must be varied periodically (sinusoidal,
    preferably), at a specific “coupling” frequency, the electromagnetic field in the vicinity of the sample, which generates a supply current inside the component. However, this electromagnetic coupling frequency (in the order of MHz), generates a harmonic heating that is not observable by means of lock-in thermography techniques. The heat transfer acts as a low-pass filter, and as the frequency increases, the thermal variations in the surface of the component are reduced, being lower than the sensitivity of these techniques, which can generally detect sources of heat with a maximum frequency of the order of kHz. Therefore, this invention proposes to modulate the feeding of the sample following a square AM waveform, in which the carrier frequency is set to that of the electromagnetic coupling, and the modulating frequency at a value that generates thermal harmonics detectable by lock thermography -in. Thus, the thermal harmonics generated at the modulating frequency, give functional information about the behavior of the component when being fed in its nominal operating regime, that is, when it is fed to the coupling frequency.
    This effect could not be achieved with conventional techniques with which other types of components are analyzed, that is, by feeding them through a pure square signal at a frequency detectable by lock-in thermography (maximum in the order of kHz). This fact is based on the fact that, since the coupling for power transfer is given in the order of MHz, said square feed with maximum frequency in the order of kHz, would not be able to transfer energy to the sample, thus preventing This type of analysis. twenty
    In the document “Wireless pad-free integrated circuit debugging by powering modulation and lock-in infrared sensing”, J. León, X. Perpiñà, M. Vellvehi, A. Baldi, J. Sacristán, and X. Jordà, Applied Physics Letters 102 (8), 084106, 2013 describes a procedure for analyzing a wireless chip, but only qualitatively, without doing a functional type analysis; in fact this document details a type of sinusoidal modulation with a depth of 25 modulation = 1 that generates little harmonic content and would not be useful in an analysis in which the chip is subjected to real or near real working conditions and neither it would result in the possibility that such analysis could give data related to consumption since it is not a method aimed at a study of the actual (functional) functioning chip. 30

    DESCRIPTION OF THE INVENTION

    An object of the invention proposes a solution to be able to analyze the behavior and characteristics of a wirelessly powered semiconductor component, or that comprises solid state parts being wirelessly powered, so as not to
    invasive and that allows to obtain data of the same in working conditions. Functional data such as consumption and current with spatial resolution, possible points of interest, etc ...
    The method of analysis of the invention is non-invasive and local and is based on obtaining data directly or indirectly related to temperatures or related magnitudes (change of reflectivity, infrared emission or other physical observables related to temperature) of the components; using "lock-in" thermography detection strategies to obtain said data.
    The analysis procedure of the invention makes it possible to detect the power dissipation of each of the blocks of the wireless component in a non-invasive manner and without the need for an electrical connection with it. This fact allows a complete functional analysis from which the following information can be extracted:
    • Frequency behavior (transfer function) of each block.
    • Analysis of the consumption of each block depending on the operating regime.
    • Detection of capacitive couplings between blocks at high frequency. fifteen
    • Determination of the causes of possible component malfunctions.
    All this contributes to improving the non-invasive diagnosis of this type of components, especially in the main fields of application of the presented technique, which include:
    • the location of physical signatures of failure, defects or non-homogeneities in the surface of the component,
    • the determination of problems in the design, manufacturing and / or encapsulation processes of the component l that may create non-homogeneous current distributions,
    • the analysis of the frequency behavior of the component, very useful for the extraction of parasitic elements or figures of merit (such as the transfer function, the PSRR of regulators, the quality of the coupling of the wireless power system, parasitic capacities causing problems of latch-up or resonance frequencies) with spatial resolution,
    • the analysis of the thermal performance of the package under constant levels of 30 power dissipation.

    BRIEF DESCRIPTION OF THE DRAWINGS

    The invention can be practiced in various ways, one of which will now be described by way of example only, and with reference to the accompanying drawings, in which:
    Figure 1 shows a flow chart where the execution of the method of the invention is shown in a generic way.
    Figure 2.- Shows a flow chart of an embodiment of the process of the invention, where detailed possible modulations to be applied are detailed.
     5
    PREFERRED EMBODIMENT OF THE INVENTION

    A preferred embodiment of the invention contemplates the method of functional analysis of wirelessly fed semiconductor components. Within the scope of this non-limiting embodiment, a discrete component is understood as a single component in a chip, while an integrated component will refer to an integrated circuit in itself in a single chip or in a PCB, and formed by several electronic components (devices and subsystems). In both cases, whether discrete or integrated components, the functional analysis procedure detailed here measures the temperature of the entire surface of the component, in order to determine that part (block, cell ...) that may be conflicting.
    The functional analysis of the invention described in Figure 1 makes use of modulation techniques based on operating a sample of the wirelessly fed component by applying certain waveforms on an external power part by reproducing a periodic signal modulated in AM . These have a carrier signal 20 of the same frequency as that necessary to wirelessly feed the component, and a modulator of a lower frequency, which allows the detection of thermal information by means of lock-in or frequency signal processing techniques. The waveforms propagate through the feeding system, until they reach the different cells (in the case of discrete components) or the different functional blocks (in the case of integrated components) within the sample to be analyzed.
    Therefore, the functional analysis procedure of a wirelessly powered electronic component described herein is initiated by putting the sample into operation at its working frequency by means of a carrier signal of frequency equal to the working frequency to wirelessly feed the sample, and a modulator of a frequency lower than the working frequency for detection by means of lock-in thermography, to subsequently make at least one thermal image taking of the sample, while it is being fed, by means of a thermal imaging system to determine a temperature distribution on the surface of the sample corresponding to a spectral component of the modulating signal. In these circumstances, at least one consistent modulation is carried out
    in applying waveforms in the feed by reproducing a periodic signal modulated in AM, described by the following generic expression:


    where is the amplitude in voltage generated at the input of the sample or 5 component, fpow is the carrier frequency (where there is the inductive coupling between turns), fAM is the frequency of the modulator (in this case square wave), and h It is the depth of modulation. From this generic expression the following modulation parameters are used:
    - Modulation depth h = 1 (V1, B (t) = V1, M (t, h = 1) =), so that all the blocks or cells of the system or device are switched on and off (referred to as modulation B), respectively, at the same time, and,

    - Modulation depth h = 0.25 (V1, C (t) = V1, M (t, h = 1/4)), in such a way that a supply formed by a 15 is generated in the voltage regulating blocks of the sample DC voltage component, with a superimposed square wave voltage curl (referred to as modulation C).
    Under at least one of the above modulations, the sample or component is still fed at its working frequency fpow, while with a lock-in thermography system, a temperature distribution on the surface of the sample or corresponding component is detected. to the spectral component of the modulating signal. Given this power dissipation, each block can be seen as a source of heat on the surface of the semiconductor that can be detected using lock-in techniques using any thermographic system, as indicated above. Depending on the modulation parameters used, among which the depth of modulation 25 "h", the waveform of the modulating signal, and the use or not of the option "double sideband with carrier suppression" (DSSC) stand out ), it is possible to generate a considerable variety of waveforms.
    Of the possible modulations that can be carried out in the feeding and can be seen in Figure 2, a first modulation with h = 1, sinusoidal modulator, option 30 DSSC can be applied. This modulation forces smooth transitions between ON and OFF states of each block, generating little harmonic content and thus increasing the signal-to-noise ratio (SNR) on the thermal map, which provides more reliable measurements than with other forms-based modulation techniques. square wave
    You can also perform a second modulation with h = 1, square modulator, without DSSC option. This modulation turns all semiconductor blocks on and off at the same time (in contrast to type A modulation). In this way, the time in which each block is kept on during each inspection cycle can be set externally. This makes it possible to determine the amount of energy dissipated by each block in each inspection period, to analyze the behavior of the system in a more faithful way to reality.
    Finally we have the option to perform a third modulation: h = 0.25, square modulator, without DSSC option. This modulation generates in the voltage regulator blocks of the system a power formed by a DC voltage component, with a curl of 10 superimposed square wave voltage. Depending on the values taken by these tensions, several effects can be decoupled. First, if the DC voltage is greater than the activation voltage of said regulator blocks, it is possible to observe their "power supply rejection ratio" or PSRR (Power Supply Rejection Ratio). Secondly, if this voltage is similar to that of activation, results are obtained that should be similar to those of type B. Finally, if this voltage is lower than that of activation, it is possible to observe how all the blocks of the system when fed with a voltage lower than the nominal.
    Thus, modulations B and C mentioned with square signal, produce voltages V1, B (t) and V1, C (t), respectively, at the input of the device or system to be analyzed, which can be described by the shape Generic wave: V1, M (t, h). So:


    It should be noted that any of the modulations presented above can be applied without them being exclusive or requiring a specific application sequence, each modulation has a resulting effect in obtaining certain sample information, although one or more two or all modulations to obtain more or less information as required.
    权利要求:
    Claims (5)
    [1]

    1. Functional analysis procedure of wirelessly powered semiconductors, a procedure comprising: 5
    • operate the sample at its working frequency by means of a carrier signal of frequency equal to the working frequency to wirelessly feed the sample or component, and a modulator of a lower frequency than the working frequency for detection by lock thermography -in,
    • make at least one thermal imaging of the sample, while it is being fed, by means of a thermal imaging system to determine a temperature distribution on the surface of the sample corresponding to a spectral component of the modulating signal,
    the procedure being characterized in that it comprises performing at least one modulation to the feed consisting of applying waveforms to the feed by reproducing a periodic signal modulated in AM, wherein said modulation is selected from:
    - square type modulation, without double sideband with carrier suppression and with modulation depth h = 1 according to:
     twenty
    where is the amplitude in voltage generated at the input of the device, fpow is the carrier frequency, fAM is the modulator frequency, and h is the modulation depth; in such a way that all the blocks or cells of the system or device are turned on and off, respectively, at the same time, and,
     25
    - square type modulation with modulation depth h = 0.25 according to:
    where is the amplitude in voltage generated at the input of the device, fpow is the carrier frequency, fAM is the modulator frequency, and h is the modulation depth; in such a way that a supply formed by a DC voltage component is generated in the voltage regulating blocks of the sample 30, with a superimposed square wave voltage curl.

    [2]
    2. Use of the method described in claim 1 for location of physical signatures of failure, defects or non-homogeneities on the surface of electronic components.

    [3]
    3. Use of the method described in claim 1 for problem determination in the design, manufacturing and / or encapsulation processes of the components that may create non-homogeneous current distributions.

    [4]
    4. Use of the method described in claim 1 for frequency behavior analysis of semiconductor components, wherein said analysis comprises the extraction of parasitic elements, electrical parameters, current consumption and / or figures of merit with spatial resolution.

    [5]
    5. Use of the method described in claim 1 for analysis of thermal encapsulation performance under constant power dissipation levels. fifteen
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    WO2016110607A1|2016-07-14|
    ES2579232B1|2017-05-12|
    引用文献:
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    PCT/ES2016/070003| WO2016110607A1|2015-01-08|2016-01-07|Method for the functional analysis of wirelessly fed semiconductors|
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